ROHM Product Detail

新設計不推薦

BR25G128NUX-3

SPI BUS EEPROM
Data Sheet
BR25G128NUX-3

新設計不推薦 BR25G128NUX-3
SPI BUS EEPROM

為了既有客戶所需而生產的產品。對於新設計則不予販售。

Data Sheet
Data Sheet

Product Detail

 
料號 | BR25G128NUX-3TR
封裝 | VSON008X2030
包裝形式 | Taping
單位數量 | 4000
最小包裝數量 | 4000
RoHS | Yes

規格:

Series

BR25G-3

Density [bit]

128K

Bit Format [Word x Bit]

16K x 8

Vcc(Min.)[V]

1.6

Vcc(Max.)[V]

5.5

Circuit Current (Max.)[mA]

8

Standby Current (Max.)[μA]

2

Write Cycle (Max.)[ms]

5

Input Frequency (Max.)[Hz]

20M

Endurance (Max.)[Cycle]

106

Data Retention (Max.)[Year]

100

I/F

SPI BUS

Operating Temperature (Min.)[°C]

-40

Operating Temperature (Max.)[°C]

85

Package Size [mm]

2.0x3.0 (t=0.6)

功能:

  • High Speed Clock Action up to 20MHz(Max)
  • Wait Function by HOLDB TerminalPart or Whole of Memory Arrays Settable asRead only Memory Area by Program1.6V to 5.5V Single Power Source Operation Most Suitable for Battery Use.Up to 64 Bytes in Page Write Mode.For SPI Bus Interface(CPOL, CPHA) =(0, 0),(1, 1)
  • Self-timed Programming CycleLow Current Consumption
  • At Write Action(5V) : 0.5mA(Typ)
  • At Read Action(5V) : 2.0mA(Typ)
  • At Standby Action(5V) : 0.1µA(Typ)
  • Address Auto Increment Function at Read ActionPrevention of Write Mistake
  • Write Prohibition at Power On
  • Write Prohibition by Command Code(WRDI)
  • Write Prohibition by WPB Pin
  • Write Prohibition Block Setting by Status Registers(BP1, BP0)
  • Prevention of Write Mistake at Low VoltageMore than 100 years Data Retention.More than 1 Million Write Cycles.Bit Format 16K×8Initial Delivery Data
  • Memory Array: FFh
  • Status Register: WPEN, BP1, BP0 : 0
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