RGTV60TK65D
短路耐量 2µs, 650V 30A, 內建快速回復二極體, TO-3PFM, 場截止溝槽型IGBT
RGTV60TK65D
短路耐量 2µs, 650V 30A, 內建快速回復二極體, TO-3PFM, 場截止溝槽型IGBT
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Description
RGTV60TK65D是低VCE(sat)、低開關損耗的IGBT。最適合PFC、太陽能逆變器、UPS、焊接、IH等用途。
Product Detail
Specifications
Series
TV: For inverter (tsc 2µs)
VCES [V]
650
IC(100°C)[A]
20
VCE(sat) (Typ.) [V]
1.5
tf(Typ.) [ns]
40
tsc(Min.) [us]
2
Built-in Diode
FRD
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
21.0x16.0 (t=5.2)
Features
- Low Collector - Emitter Saturation Voltage
- High Speed Switching & Low Switching Loss
- Short Circuit Withstand Time 2μs
- Built in Very Fast & Soft Recovery FRD
- Pb - free Lead Plating ; RoHS Compliant
