RGT16BM65D
短路耐量 5µs, 650V 8A, 內建快速回復二極體, TO-252, 場截止溝槽型IGBT
RGT16BM65D
RGT16BM65D
短路耐量 5µs, 650V 8A, 內建快速回復二極體, TO-252, 場截止溝槽型IGBT
ROHM的IGBT（絕緣閘極型雙極電晶體）產品為廣大的高電壓、大電流應用的高效化和節能化做出了貢獻。
Product Detail
規格:
Series
T: For inverter (tsc 5µs)
VCES [V]
650
IC(100°C)[A]
8
VCE(sat) (Typ.) [V]
1.65
tf(Typ.) [ns]
95
tsc(Min.) [us]
5
Built-in Diode
FRD
Pd [W]
94
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
6.6x10 (t=2.2)
功能:
- Low Collector-Emitter Saturation Voltage
- Low Switching Loss
- Short Circuit Withstand Time 5µs
- Built in Very Fast & Soft Recovery FRD (RFN-Series)
- Pb-free Lead Plating; RoHS Compliant
