R6002ENH
低雜訊規格 Nch 600V 2A 功率MOSFET
R6002ENH
R6002ENH
低雜訊規格 Nch 600V 2A 功率MOSFET
R6xxxENx系列是重視易用性，以低雜訊性能為特點的Super Junction MOSFET產品。該系列產品可在音響和照明等需要盡可能抑制雜訊的應用中實現最佳性能。
Product Detail
規格:
Package Code
SOP8
Applications
Power Supply
Number of terminal
8
Polarity
Nch
Drain-Source Voltage VDSS[V]
600
Drain Current ID[A]
1.7
RDS(on)[Ω] VGS=10V(Typ.)
2.8
RDS(on)[Ω] VGS=Drive (Typ.)
2.8
Total gate charge Qg[nC]
6.5
Power Dissipation (PD)[W]
2
Drive Voltage[V]
10
Trr (Typ.)[ns]
240
Mounting Style
Surface mount
Bare Die Part Number
Available: K7412
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
5x6 (t=1.75)
功能:
- Low on-resistance
- Fast switching speed
- Parallel use is easy
- Pb-free plating ; RoHS compliant
