BSM300D12P3E005
SiC功率模組

BSM300D12P3E005是一款半橋型SiC功率模組，由羅姆製造的SiC-UMOSFET和SiC-SBD（蕭特基二極體）組成。適用於電機驅動、逆變器、轉換器應用。

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* 本產品是標準級的產品。
本產品不建議使用的車載設備。
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Product Detail

 
料號 | BSM300D12P3E005
狀態 | 推薦品
封裝 | E
單位數量 | 4
最小包裝數量 | 4
包裝形式 | Corrugated Cardboard
RoHS | Yes

規格:

Drain-source Voltage[V]

1200

Drain Current[A]

300

Total Power Dissipation[W]

1260

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package Size [mm]

152x57.95 (t=18)

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功能:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD3G12D24-EVK001

    • This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User Guide
    • Snubber Module - MGSM1D72J2-145MH16

    • Snubber Module for BSM series (1200V, E / G type)

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