IPD(智慧功率元件)

IPD(智慧功率元件)

ROHM的IPD(智慧功率元件)系列是在一顆晶片中內建了低導通電阻MOSFET,和各種保護電路的車電級通用開關。為過熱、過電流、過電壓以及負載短路提供更高水準的保護。除了設置於引擎室、車室內的電阻負載、電容負載、電感負載之外,還可用於工控設備用途。

Subcategory Search

 
* Gen (Generation) means the IPD development process generation.
Family Function Generation RDS (ON) (Typ.)[mΩ]
8-28 40-70 80-120 150-250 300-
High Side Current Sense 2nd Gen   1 Product      
3rd Gen (1ch) Under Development    
3rd Gen (2ch) Under Development    
Standard / Error Flag 2nd Gen (1ch)   3 Products  
2nd Gen (2ch)   1 Product      
Variable Overcurrent Limit 2nd Gen (1ch)   1 Product      
2nd Gen (2ch)   3 Products      
Low Side Standard / Error Flag 2nd Gen (1ch) 2 Products 5 Products  
2nd Gen (2ch)   4 Products  
Slew Rate Control 2nd Gen     1 Product    
Multi Channel 2nd Gen         6 Products

Parametric Search

 
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      Supporting Information

       

      IPD的功能

      電流檢測高精度輸出電流監控器

      1ch/2ch 高側開關
      BV1HBxxxEFJ-C(1ch) / (開発中)BV2HBxxxEUV-C(2ch)

      IPD的功能:電流檢測

      可調過電流限制功能根據負載提供相應的保護

      1ch/2ch 高側開關
      BV1HxxxxEFJ-C(1ch) / BV2HxxxxEFU-C(2ch)

      IPD的功能:可調過電流限制功能

      可調迴轉率同時降低了開關損耗和雜訊

      1ch 低側開關 
      BV1LFxxxEFJ-C(Low Slew Rate)

      IPD的功能:可調迴轉率

      多通道非常適合驅動多個負載

      8ch 低側開關
      BD8LD650EFV-C, BD8LB65AEFV-C

      IPD的功能:多通道

      關於TDACC™

      TDACC™是ROHM Co., Ltd.的注冊商標,為ROHM獨家電路和元件技術。IPD內部的功率MOSFET部分在關斷時會因反電動勢而發熱,該技術通過優化控制流過電流的通道數量,實現了保持小尺寸的前提下很難同時兼顧的低發熱量和低導通電阻。

      TDACC™