BM1R00147F
高效率、低待機功耗、支援連續模式 二次側同步整流控制IC
BM1R00147F
高效率、低待機功耗、支援連續模式 二次側同步整流控制IC
BM1R00147F是用於二次測輸出段的同步整流控制器。內建超低功耗的高精度分流穩壓器，可大幅度減少待機時的功耗。分流穩壓器由完全獨立晶片構成，因此即使在High Side使用時，也可作為GND基準工作。此外，連續模式工作時，可以不輸入一次側開關同步信號進行動作，有助於進一步節省空間。工作電源電壓範圍廣，為2.7V～32V，可應對各種輸出的應用。採用高耐壓120V處理器，可直接監視漏極電壓。
Product Detail
規格:
Channel
1
Controller Type
SR
Circuit Configuration
Flyback
Vin1 (Min.)[V]
2.7
Vin1 (Max.)[V]
32
Shunt Regulator Accuracy (%)
0.5
VCC OVP
Auto Restart
OVP
Fixed
Compulsion OFF Time (typ. μs)
2
FET
-
Drain Monitor Voltage [V]
120
BR PIN
No
Light Load mode
No
EN
No
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
105
Package Size [mm]
5x6.2 (t=1.71)
功能:
- Built-in Ultra-Low Consumption Shunt Regulator Reducing Standby Power Consumption
- Synchronous Rectification FET Supports High and Low Side
- 120V High Voltage Process DRAIN terminal
- Wide Input Operating Voltage Range of 2.7V to 32V
- Supports LLC and PWM QR Controller
- No Input Required on the Primary-Side at CCM
- Built-in Overvoltage Protection for SH_IN and SH_OUT Terminal
- Built-in Thermal Shutdown Function
- Built-in Auto Shutdown Function
- SOP8 package
Reference Design / Application Evaluation Kit
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- Evaluation Board - BM1R00147F-EVK-001
This evaluation board has provided the secondary-side synchronous rectification circuit using BM1R00147F. This evaluation board assumes that the primary side controller of insulated type with PWM flyback converter operates in DCM and set to 5V for output voltage. The secondary-side MOSFET uses ROHM’s RX1L16BGN. The secondary-side MOSFET can be located on High Side. (When the secondary-side MOSFET is located on Low Side, see “User’s Guide BM1R00147F-EVK-002 (No.60UG023E)”.)
-
- Evaluation Board - BM1R00147F-EVK-002
This evaluation board has provided the secondary-side synchronous rectification circuit using BM1R00147F. This evaluation board assumes that the primary side controller of insulated type with PWM flyback converter operates in DCM and set to 5V for output voltage. The secondary-side MOSFET uses ROHM’s RX1L16BGN. The secondary-side MOSFET can be located on Low Side. (When the secondary-side MOSFET is located on High Side, see “User’s Guide BM1R00147F-EVK-001 (No.60UG021E)”.)
