RQ3E150GN
4.5V驅動型 Nch MOSFET
RQ3E150GN
RQ3E150GN
4.5V驅動型 Nch MOSFET
場效電晶體的MOSFET。ROHM提供微細化製程的「超低導通電阻元件」並可應用在大範圍領域的功率MOSFET。並可依用途推出符合小型・高功率・複合化的多樣產品陣容對應市場上的各種需求。
Product Detail
規格:
Package Code
HSMT8 (3.3x3.3)
Applications
Power Supply
Number of terminal
8
Polarity
Nch
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
39
RDS(on)[Ω] VGS=4.5V(Typ.)
0.0062
RDS(on)[Ω] VGS=10V(Typ.)
0.0047
RDS(on)[Ω] VGS=Drive (Typ.)
0.0062
Total gate charge Qg[nC]
7.4
Power Dissipation (PD)[W]
17
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Bare Die Part Number
Available: K4512
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
3.3x3.3 (t=0.8)
功能:
・ Low on - resistance.・ High Power Package (HSMT8).
・ Pb-free lead plating ; RoHS compliant
・ Halogen Free
