BR25G128FVT-3
SPI BUS EEPROM

BR25G128FVT-3是128kbit SPI BUS介面的序列EEPROM。

Data Sheet 購買 *
* 本產品是標準級的產品。
本產品不建議使用的車載設備。

Product Detail

 
料號 | BR25G128FVT-3GE2
狀態 | 可購買
封裝 | TSSOP-B8
單位數量 | 3000
最小包裝數量 | 3000
包裝形式 | Taping
RoHS | Yes

規格:

Series

BR25G-3

Density [bit]

128K

Bit Format [Word x Bit]

16K x 8

Vcc(Min.)[V]

1.6

Vcc(Max.)[V]

5.5

Circuit Current (Max.)[mA]

8

Standby Current (Max.)[μA]

2

Write Cycle (Max.)[ms]

5

Input Frequency (Max.)[Hz]

20M

Endurance (Max.)[Cycle]

106

Data Retention (Max.)[Year]

100

I/F

SPI BUS

Operating Temperature (Min.)[°C]

-40

Operating Temperature (Max.)[°C]

85

Package Size [mm]

3x6.4 (t=1.2)

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功能:

  • High Speed Clock Action up to 20MHz(Max)
  • Wait Function by HOLDB TerminalPart or Whole of Memory Arrays Settable asRead only Memory Area by Program1.6V to 5.5V Single Power Source Operation Most Suitable for Battery Use.Up to 64 Bytes in Page Write Mode.For SPI Bus Interface(CPOL, CPHA) =(0, 0),(1, 1)
  • Self-timed Programming CycleLow Current Consumption
  • At Write Action(5V) : 0.5mA(Typ)
  • At Read Action(5V) : 2.0mA(Typ)
  • At Standby Action(5V) : 0.1µA(Typ)
  • Address Auto Increment Function at Read ActionPrevention of Write Mistake
  • Write Prohibition at Power On
  • Write Prohibition by Command Code(WRDI)
  • Write Prohibition by WPB Pin
  • Write Prohibition Block Setting by Status Registers(BP1, BP0)
  • Prevention of Write Mistake at Low VoltageMore than 100 years Data Retention.More than 1 Million Write Cycles.Bit Format 16K×8Initial Delivery Data
  • Memory Array: FFh
  • Status Register: WPEN, BP1, BP0 : 0
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