Trench MOS Structure, 100V, 20A, TO-263AB, Highly Efficient SBD - RBLQ20NB10S (開發中)

The RBLQ20NB10S is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.

* 本產品是標準級的產品。本產品不建議使用的車載設備。
料號 | RBLQ20NB10STL
狀態 | 開發中
封裝 | LPDL
單位數量 | 1000
最小包裝數量 | 1000
包裝形式 | Taping
RoHS | Yes

規格:

Grade

Standard

Configuration

Single

Package Code

TO-263AB

Package Size[mm]

15.1x10.1(t=4.7)

Mounting Style

Leaded type

Number of terminal

3

VRM[V]

100

Reverse Voltage VR[V]

100

Average Rectified Forward Current IO[A]

20.0

IFSM[A]

200.0

Forward Voltage VF(Max.)[V]

0.86

IF @ Forward Voltage [A]

20.0

Reverse Current IR(Max.)[mA]

0.08

VR @ Reverse Current[V]

100

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

功能:

  • High reliability
  • Power mold type
  • Low VF and low IR