溝槽MOS barrier結構, 100V 20A, TO-263AB, 高效率功率SBD - RBLQ20NB10S (開發中)
RBLQ20NB10S是徹底改善了低VF與低IR之間平衡關係的高效率蕭特基二極體。在保持低VF的同時，實現了高溫動作時的穩定動作。較適合開關電源、續流二極體、反接保護用途。
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規格:
Grade
Standard
Configuration
Single
Package Code
TO-263AB
Package Size[mm]
15.1x10.1(t=4.7)
Mounting Style
Leaded type
Number of terminal
3
VRM[V]
100
Reverse Voltage VR[V]
100
Average Rectified Forward Current IO[A]
20.0
IFSM[A]
200.0
Forward Voltage VF(Max.)[V]
0.86
IF @ Forward Voltage [A]
20.0
Reverse Current IR(Max.)[mA]
0.08
VR @ Reverse Current[V]
100
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
功能:
- High reliability
- Power mold type
- Low VF and low IR