Characteristics Data
- RBLQ20NB10S ESD Data
RBLQ20NB10S
RBLQ20NB10S (開發中)
溝槽MOS barrier結構, 100V 20A, TO-263AB, 高效率功率SBD
RBLQ20NB10S是徹底改善了低VF與低IR之間平衡關係的高效率蕭特基二極體。在保持低VF的同時，實現了高溫動作時的穩定動作。較適合開關電源、續流二極體、反接保護用途。
Data Sheet
* 本產品是標準級的產品。
本產品不建議使用的車載設備。
本產品不建議使用的車載設備。
Product Detail
規格:
Grade
Standard
Configuration
Single
Package Code
TO-263AB
Package Size[mm]
15.1x10.1(t=4.7)
Mounting Style
Leaded type
Number of terminal
3
VRM[V]
100
Reverse Voltage VR[V]
100
Average Rectified Forward Current IO[A]
20.0
IFSM[A]
200.0
Forward Voltage VF(Max.)[V]
0.86
IF @ Forward Voltage [A]
20.0
Reverse Current IR(Max.)[mA]
0.08
VR @ Reverse Current[V]
100
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
功能:
- High reliability
- Power mold type
- Low VF and low IR
Design Resources
Technical Articles
Schematic Design & Verification
- Method for Monitoring Switching Waveform
- Importance of Probe Calibration When Measuring Power: Deskew
- Impedance Characteristics of Bypass Capacitor
Thermal Design
- Notes for Temperature Measurement Using Thermocouples
- Two-Resistor Model for Thermal Simulation
- Notes for Temperature Measurement Using Forward Voltage of PN Junction
- What is a Thermal Model? (Diode)
- Measurement Method and Usage of Thermal Resistance RthJC
- Precautions When Measuring the Rear of the Package with a Thermocouple
Tools
Characteristics Data
- RBLQ20NB10S ESD Data
Packaging & Quality
Package Information
- Package Dimension
- Moisture Sensitivity Level
- Anti-Whisker formation
- Condition of Soldering
Environmental Data
- About Flammability of Materials
- About Non-use SVHC under Reach Regulation : Please contact us by filling in the form.
- Compliance of the RoHS / ELV directive
Export Information
- About Export Regulations