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SiC功率元件

相較於矽(Si)半導體,碳化矽(SiC)是一種更能實現小型化/低功耗與高效率目標的功率元件。此種材料能夠降低切換損耗,在高溫環境下仍具備絕佳的工作特性,因此很有機會成為新世代的低損耗元件。
Application Note for SiC Power Devices is hereDatasheet

FAQ 
  • SiC蕭特基二極體 (57)

    因為Total Capacitive Charge(Qc)小、故可減少切換損失、亦可達到高速切換。 另外、Si材料FRB (Fast Recovery Diode)的trr會因溫度上升而增加、但SiC卻不受溫昇影響, 幾乎可維持在一定的特性。

     
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  • SiC MOSFET (21)

    原理上因為switching動作時沒有尾電流(tail current), 故可高速動作, 且降低切換損失。 Chip面積不需太大, 即可達成低導通電阻, 故可做到低電容量與低Gate charge。Si元件的導通阻抗會隨著溫度上升而增加2倍以上; SiC的導通阻抗增加量則相對較小, 對於產品的小型化與節能化有所貢獻。

     
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  • SiC電源模組 (9)

    完全以碳化矽(SiC)來架構內建的功率半導體元件,切換損耗更大大地低於矽製(Si) IGBT模組配備SiC-SBD、SiC-MOSFET,因此動作速度高於傳統的Si-IGBT,可達到100KHz以上之高頻動作。

     
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  • SiC Schottky Barrier Diodes Bare Die (10)

    The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation. In addition, unlike Si-based fast recovery diodes where the trr increases along with temperature, Silicon carbide (SiC) devices maintain constant characteristics, resulting in better performance.
    For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

  • SiC MOSFET Bare Die (19)

    In principle, there is no tail current during switching, resulting in faster operation and reduced switching loss. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. SiC exhibits minimal ON resistance increases and provides greater package miniaturization, and energy savings than Si devices, in which the ON resistance can more than double with increased temperature.
    For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.